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Neuropeptide Y (NPY) plays a central role in a variety of emotional and physiological functions in humans, such as forming a part of the body′s response to stress and anxiety. This work compares the impact of MCH and PEG spacer molecules on the performance of a potentiometric NPY sensor. An NPY‐specific DNA aptamer with thiol termination was immobilized onto a gold electrode surface. The performance of the sensor is compared when either an MCH‐ or PEG‐based self‐assembled monolayer is formed following aptamer immobilization. Backfilling the surface with alkanethiol spacer molecules like these is key for proper conformational folding of aptamer‐target binding. Non‐specific adhesion of NPY to the MCH‐based sensor surface was observed via surface plasmon resonance (SPR), and then confirmed via potentiometry. It is then shown that PEG improves the sensor′s sensitivity to NPY compared to the surfaces with an MCH‐based SAM. We achieve the detection of picomolar range NPY levels in buffer with a sensitivity of 36.1 mV/decade for the aptamer and PEG‐based sensor surface, thus demonstrating the promise of potentiometric sensing of NPY for future wearable deployment. The sensor′s selectivity was also studied via exposure to cortisol, a different stress marker, resulting in a 13x smaller differential voltage (aptamer‐specific) response compared to that of NPY. 

Enhancement mode AlInN/gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are fabricated by thermally oxidizing the barrier region under the gate. The oxidation is performed at 850 ∘ C in O 2 , and a SiN x mask is used to achieve selective oxidization of the AlInN layer. For comparison, a standard Schottky gate and atomic layer deposition (ALD) Al 2 O 3 metal–insulator–semiconductor (MIS) HEMTs are fabricated from the same structure and show depletion mode behavior as expected. Scanning transmission electron microscopy (STEM) and energy-dispersive X-ray spectroscopy (EDS) mappings are performed to characterize the gate of the oxidized HEMTs, showing complete oxidation of the AlInN barrier. All the devices are tested to determine their transfer and output characteristics. The results show that the thermally oxidized gate produces a positive shift in threshold voltage at ∼ 4 V and low currents ( ∼ 2 × 10 −7 mA/mm) at zero gate voltage. The oxidized HEMTs are also subjected to postmetallization annealing (PMA) at 400 ∘ C and 500 ∘ C for 10 min flowing 1000 sccm of N 2 , retaining enhancement mode behavior and leading to a further positive shift in threshold voltage. 

Among group VI transition metal dichalcogenides, MoTe 2 is predicted to have the smallest energy offset between semiconducting 2H and semimetallic 1T′ states. This makes it an attractive phase change material for both electronic and optoelectronic applications. Here, we report fast, nondestructive, and full phase change in Al 2 O 3 -encapsulated 2H-MoTe 2 thin films to 1T′-MoTe 2 using rapid thermal annealing at 900 °C. Phase change was confirmed using Raman spectroscopy after a short annealing duration of 10 s in both vacuum and nitrogen ambient. No thickness dependence of the transition temperatures was observed for flake thickness ranging from 1.5 to 8 nm. These results represent a major step forward in understanding the structural phase transition properties of MoTe 2 thin films using external heating and underline the importance of surface encapsulation for avoiding thin film degradation. 

Abstract We investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating implanted Mg. Contacts deposited on these films exhibit low rectification and high leakage current compared to contacts on as-grown films. By employing an optimized surface treatment to restore the GaN surface following UHPA, we obtain Schottky contacts with a high rectification ratio of ∼10⁹, a near-unity ideality factor of 1.03, and a barrier height of ∼0.9 eV. These characteristics enable the development of GaN junction barrier Schottky diodes employing Mg implantation and UHPA.